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| High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 05N100 VDSS IXTP 05N100 I D25 RDS(on) = 1000 V = 750 mA = 17 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM Maximum Ratings TO-220AB (IXTP) 1000 1000 30 40 750 3 1.0 V V V V mA A A mJ mJ V/ns W C C C Features International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times g C G = Gate, S = Source, D = Drain, TAB = Drain G S D (TAB) GD S D (TAB) TO-263 AA (IXTA) TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 47 TC = 25C 5 100 3 40 -55 ... +150 150 -55 ... +150 Mounting torque 1.13/10 Nm/lb.in. 4 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 100 TJ = 25C TJ = 125C 15 25 500 17 V V nA A A Applications Switch-mode and resonant-mode power supplies Flyback inverters DC choppers High frequency matching Advantages Space savings High power density VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 25 A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 375 mA Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS98736B(10/04) IXTA 05N100 IXTP 05N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 0.5 0.85 240 VGS = 0 V, VDS = 25 V, f = 1 MHz 22 4 11 VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A RG = 47, (External) 19 40 28 10.5 VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A 2.5 5.0 3.1 (IXTP) 0.50 S pF pF pF ns ns ns ns nC nC nC K/W K/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side TO-220 AB Dimensions gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 500 mA, pulse test Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 750 3 2 710 mA A V ns TO-263 AA Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 6,727,585 6,759,692 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 IXTA 05N100 IXTP 05N100 Fig. 1. Output Characteristics @ 25C 0.8 0.7 0.6 VGS = 1 0V 7V 6V 1.2 1.0 1.4 VGS = 10V 8V 7V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 0.5 0.4 0.3 0.2 5V 0.1 0.0 0 2 4 6 8 10 12 14 4.5V 5.5V I D - Amperes 0.8 0.6 6V 5.5V 0.4 0.2 0.0 0 5 10 15 20 25 30 5V V D S - Volts Fig. 3. Output Characteristics @ 125C 0.8 0.7 0.6 VGS = 1 0V 7V 6V 3 2.8 2.6 VGS = 10V V D S - Volts Fig. 4. Norm alized RDS(on) vs. Junction Te m perature R D S ( o n ) - Normalized 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 I D = 375mA I D = 750mA I D - Amperes 0.5 0.4 0.3 5.5V 5V 0.2 0.1 0.0 0 5 10 4.5V 15 20 25 30 -50 -25 0 25 50 75 100 125 150 V D S - Volts TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Tem pe rature Fig. 5. Norm alize d RDS(on) vs . ID 2.6 2.4 VGS = 10V TJ = 125C 0.8 0.7 0.6 R D S ( o n ) - Normalized 2.2 I D - Amperes TJ = 25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.0 0.2 0.4 0.5 0.4 0.3 0.2 0.1 0.0 I D - Amperes 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXTA 05N100 IXTP 05N100 Fig. 7. Input Adm ittance 1.0 0.9 0.8 1.6 1.4 1.2 TJ = -40C 25C 125C Fig. 8. Transconductance I D - Amperes g f s - Siemens 5.0 5.5 6.0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 3.5 4.0 4.5 TJ = 125C 25C -40C 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 2.5 10 9 2.0 8 7 1.5 VDS = 500V I D = 1A I G = 1mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 25C 0.7 0.8 0.9 6 5 4 3 2 1 0 1.0 TJ = 125C 0.5 0.0 0.4 0.5 0.6 V S D - Volts Fig. 11. Capacitance 1000 f = 1MHz 10.0 0 1 2 3 4 5 6 7 8 9 10 11 Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance Capacitance - picoFarads 100 R( t h ) J C - C / W 35 40 C iss 1.0 10 C oss C rss 1 0 5 10 15 20 25 30 0.1 1 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. Pulse Width - milliseconds |
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